English (United Kingdom)

https://curated-unify.zendy.io/wp-json/zendy-region/v1/featured_content/oa?rat=en

https://curated-unify.zendy.io/wp-json/zendy-region/v1/highlighted_journal/

Global: Zendy Plus annual

Presents the access of premium content as premium feature

Premium Content

Presents the keyphrase highlighting as premium feature

Keyphrase Highlighting

Presents the summarisation as premium feature

Summarisation

Insights

Presents the pdf analysis as premium feature

PDF Analysis

Presents the zaia usage as premium feature

ZAIA

Global: Zendy Plus monthly

Global: Zendy Tools annual

Global: Zendy Tools monthly

Global: Zendy Free Plan

The 1/f resistance noise of a two-dimensional (2D) hole system in a highmobility GaAs quantum well has been measured on both sides of the 2Dmetal-insulator transition (MIT) at zero magnetic field (B=0), and deep in theinsulating regime. The two measurement methods used are described: I or Vfixed, and measurement of resp. V or I fluctuations. The normalized noisemagnitude SR/R^2 increases strongly when the hole density is decreased, and itstemperature (T) dependence goes from a slight increase with T at the largestdensities, to a strong decrease at low density. We find that the noisemagnitude scales with the resistance, SR /R^2 ~ R^2.4. Such a scaling isexpected for a second order phase transition or a percolation transition. Thepossible presence of such a transition is investigated by studying thedependence of the conductivity as a function of the density. This dependence isconsistent with a critical behavior close to a critical density p* lower thanthe usual MIT critical density pc.Comment: 13 pages, 8 figures, Proceedings of SPIE: Fluctuations and noise in  materials, D. Popovic, M.B. Weissman, Z.A. Racz Eds., Vol. 5469, pp. 101-113,  Mspalomas, Spain, 200

Resistance noise scaling in a dilute two-dimensional hole system in GaAs