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Focused Ion Beam (FIB) technology has been demonstrated to be a powerful technique in micro-machining and microfabrication. As the critical dimensions of the device migrate towards the nanometre regime, FIB becomes an important tool in the construction of these devices. In machining and fabrication with FIB in the deep submicron dimensions, an important consideration is the ability to correlate the structures with the processes of deposition or milling so that the instrumental parameters can be optimized. Effects such redeposition during milling in such fine dimensions will have to be controlled. However, since feature size of these structures fabricated with the FIB often have profiles of a few 10's of nanometres, it is increasingly difficult to use standard analytical techniques such as scanning electron microscopy (SEM) to resolve such features. At the same time, atomic force microscopy (AFM) with it's near atomic resolution is now a standard metrology tool in semiconductor manufacturing. In this paper the authors would like to demonstrate, using Atomic force Microscopy (AFM), the effects of parameters such as probe current on the micromachined profiles produced by FIB. We will compare these results obtained with AFM with those using SEM. Control of these parameters in the fabrication of nanostructures on different substrate materials such as metals and semiconductors will also be demonstrated

<title>Characterization of nanostructures micromachined with focused ion beams (FIBs)</title>