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Defect clusters in the bulk of large KDP crystals are revealed using a microscopic fluorescence imaging system and CW laser illumination. Exposure of the crystal to high power 355-nm, 3-ns laser irradiation leads to a significant reduction of the number of observed optically active centers. The initially observed defect cluster concentration is approximately 104-106 per mm3 depending on the crystal growth method and sector of the crystal. The number of defect clusters can be reduced by a factor of 102 or more under exposure to 355-nm laser irradiation while their average intensities also decreases. Spectroscopic measurements provide information on the electronic structure of the defects.

Observation of photoexcited emission clusters in the bulk of KDP and laser conditioning under 355-nm irradiation