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The electric properties of CdZnTe radiation detectors are largely determined by the electron and hole traps in this material. The traps, in addition to degrading the detector performance, can function as dopants and determine the resistivity of the material. Thermoelectric emission spectroscopy and thermally stimulated conductivity are used to detect these traps in a commercially available spectrometer-grade CdZnTe detector, and the electrical resistivity is measured as a function of temperature. A deep electron trap having an energy of 695 meV and cross section of 8 X 10-16 cm(superscript 2$ is detected and three hole traps having energies of 70 +/- 20 meV, 105 +/- 30 meV and 694 +/- 162 meV are detected. A simple model based on these traps explains quantitatively all the data, including the electrical properties at room temperature and also their temperature dependence.

proceedings of spie, the international society for optical engineering/proceedings of spie

&lt;title&gt;Detection of electron and hole traps in CdZnTe radiation detectors by thermoelectric emission spectroscopy and thermally stimulated conductivity&lt;/title&gt;