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Conduction-band effective masses in a direction parallel to the quantum well plane were investigated in n-type- modulation-doped InGaAs/InAlAs multi-quantum well system. Thicknesses of well and barrier were 5 and 10 nm. Three highly-doped specimens having about 1 X 1012 cm-2 per one quantum well were prepared by MBE. Double-crystal x-ray diffraction was used to check the crystal quality. Heavy electron effective masses, almost 50 percent bigger than the band edger mass of 0.041m0, were measured by far-IR and IR cyclotron resonances under pulse high magnetic fields up to 100 T. Nonparabolicity of this subband was less than 12 percent by comparing the two cyclotron resonances. Observed 2D subband structure was quite different from conduction band in a direction perpendicular to the same quantum well and from that of GaAs/GaAlAs quantum well system.

Characterization of heavy masses of two-dimensional conduction subband in InGaAs/InAlAs MQW structures by pulsed cyclotron resonance technology