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As a novel layered noble metal dichalcogenide material, palladium diselenide(PdSe2) has attracted wide interest due to its excellent optical and electronicproperties. In this work, a strong third-order nonlinear optical response of 2DPdSe2 films is reported. We conduct both open aperture (OA) and closed-aperture(CA) Z scan measurements with a femtosecond pulsed laser at 800 nm toinvestigate the nonlinear absorption and nonlinear refraction, respectively. Inthe OA experiment, we observe optical limiting behaviour originating from largetwo photo absorption (TPA) in the PdSe2 film of \b{eta} = 3.26 x 10-8 m/W. Inthe CA experiment, we measure a peak-valley response corresponding to a largeand negative Kerr nonlinearity of n2 = -1.33 x 10-15 m2/W, two orders ofmagnitude larger than bulk silicon. In addition, the variation of n2 as afunction of laser intensity is also characterized, with n2 decreasing inmagnitude when increasing incident laser intensity, becoming saturated at n2 =-9.96 x 10-16 m2/W at high intensities. Our results show that the extraordinarythird order nonlinear optical properties of PdSe2 have strong potential forhigh-performance nonlinear photonic devices.

High 3rd Order Optical Kerr Nonlinearity of PdSe2 Di-chalcogenide 2D Films for Nonlinear Photonic Chips