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We report enhanced nonlinear optics in complementary metal oxidesemiconductor compatible photonic platforms through the use of layered twodimensional (2D) graphene oxide (GO) films. We integrate GO films with siliconon insulator nanowires (SOI), high index doped silica glass (Hydex) and siliconnitride (SiN) waveguides and ring resonators, to demonstrate an enhancedoptical nonlinearity including Kerr nonlinearity and four wave mixing (FWM).The GO films are integrated using a large area, transfer free, layer by layermethod while the film placement and size are controlled by photolithography. InSOI nanowires we observe a dramatic enhancement in both the Kerr nonlinearityand nonlinear figure of merit (FOM) due to the highly nonlinear GO films. Selfphase modulation (SPM) measurements show significant spectral broadeningenhancement for SOI nanowires coated with patterned films of GO. The dependenceof GO Kerr nonlinearity on layer number and pulse energy shows trends of thelayered GO films from 2D to quasi bulk like behavior. The nonlinear parameterof GO coated SOI nanowires is increased 16 fold, with the nonlinear FOMincreasing over 20 times to a FOM greater than 5. We also observe an improvedFWM efficiency in SiN waveguides integrated with 2D layered GO films. FWMmeasurements for samples with different numbers of GO layers and at differentpump powers are performed, achieving up to 7.3 dB conversion efficiency (CE)enhancement for a uniformly coated device with 1 layer of GO and 9.1 dB for apatterned device with 5 layers of GO. These results reveal the strong potentialof GO films to improve the nonlinear optics of silicon, Hydex and SiN photonicdevices.

Enhancing the third-order optical nonlinear performance in CMOS devices with integrated 2D graphene oxide films