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The fast development of nitrides has given the opportunity to investigate AlGaN as a material for ultraviolet detection. Such AlGaN based camera presents an intrinsic spectral selectivity and an extremely low dark current at room temperature. Firstly, we will present results on focal plane array of 320x256 pixels with a pitch of 30μm. The peak responsivity is around 280nm (solar-blind), 310nm and 360nm. These results are obtained in a standard SWIR supply chain (readout circuit, electronics). With the existing near-UV camera grown on sapphire, the short wavelength cutoff is due to a window layer improving the material quality of the active layer. The ultimate shortest wavelength would be 200nm due to sapphire substrate. We present here the ways to transfer the standard design of Schottky photodiodes from sapphire to silicon substrate. We will show the capability to remove the silicon substrate, and etch the window layer in order to extend the band width to lower wavelengths.

Status of AlGaN based focal plane array for near UV imaging and strategy to extend this technology to far-UV by substrate removal