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For EUV photomasks, high-k absorber materials represent a potential strategy to effectively mitigate mask 3D effects which are getting more prominent as the scanners’ NA increases. The performance of RESCAN, our actinic lensless imaging microscope is evaluated through three different absorber materials (HSQ, TaBN, and Ni) together with the imaging properties of the materials themselves. Defect maps for each material are analyzed and compared.

A comparative study of EUV absorber materials using lensless actinic imaging of EUV photomasks