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Pocket-pumping is an established technique for identifying the locations of charge trapping sites within the transport channels of CCDs. Various parameters of the pumping process can be manipulated to increase the efficiency, or allow characterisation of the trap sites effective during nominal operating modes. A CCD273 was irradiated in a triangular region by protons to a 10 MeV equivalent fluence of 1.2E9 p.cm2, ensuring a suitably low trap density for ease of automated trap recognition. X-rays of 5,898 eV were incident on the CCD above the region irradiated with the triangle, such that events could be analysed having passed through an increasing length of irradiated silicon and hence number of trapping sites. Here we present the relationship between the number of traps identified by pocket pumping within the parallel transport channels of a CCD273 and the amount of signal that is deferred by the trapping process during readout.

The relationship between pumped traps and signal loss in buried channel CCDs