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We propose a new intermediate band GaAs solar cell comprising an AlxGa1-xAsabsorber with built-in GaSb type-II quantum dots (QDs) [a gradual AlxGa1-xAsabsorber with built-in AlyGa1-ySb QDs (0<x=y<0.40) as a variant] separated fromthe depletion region. We study the modification of the band alignment attype-II interface by two-photon absorption of concentrated sunlight. Ourcalculation shows that photogenerated carriers produce localized exciton-likeelectron-hole pairs spatially separated at QDs. Local field of such pairs mayessentially modify potential barrier surrounding QDs, increase recombinationlifetime of mobile carriers and additional photocurrent generated by twophotonabsorption. Concentration of about 300-sun pushes by 15% up the conversionefficiency as compared to the efficiency of the reference single junction GaAssolar cell without QDs.

proceedings of spie, the international society for optical engineering/proceedings of spie

Modification of band alignment at interface of AlyGa1-ySb/AlxGa1-xAs  type-II quantum dots by concentrated sunlight in intermediate band solar  cells with separated absorption and depletion regions