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We present an evaluation of a novel on-chip charge detector, called theSingle electron Sensitive Read Out (SiSeRO), for charge-coupled device (CCD)image sensor applications. It uses a p-MOSFET transistor at the output stagewith a depleted internal gate beneath the p-MOSFET. Charge transferred to theinternal gate modulates the source-drain current of the transistor. We havedeveloped a drain current readout module to characterize the detector. Theprototype sensor achieves a charge/current conversion gain of 700 pA perelectron, an equivalent noise charge (ENC) of 15 electrons (e-) root meansquare (RMS), and a full width half maximum (FWHM) of 230 eV at 5.9 keV. Inthis paper, we discuss the SiSeRO working principle, the readout moduledeveloped at Stanford, and the first characterization test results of theSiSeRO prototypes. While at present only a proof-of-concept experiment, in thenear future we plan to use next generation sensors with improved noiseperformance and an enhanced readout module. In particular, we are developing areadout module enabling Repetitive Non-Destructive Readout (RNDR) of thecharge, which can in principle yield sub-electron ENC performance. With thesedevelopments, we eventually plan to build a matrix of SiSeRO amplifiers todevelop an active pixel sensor with an on-chip ASIC-based readout system. Sucha system, with fast readout speeds and sub-electron noise, could be effectivelyutilized in scientific applications requiring fast and low-noisespectro-imagers.

First results on SiSeRO (Single electron Sensitive Read Out) devices -- a new X-ray detector for scientific instrumentation