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We have devised and fabricated high-speed silicon-on-insulator resonant microring photodiodes. The detectors comprise a p-i-n junction across a silicon rib waveguide microring resonator. Light absorption at 1550 nm is enhanced by implanting the diode intrinsic region with boron ions at 350 keV with a dosage of 1 × 10 13 cm −2 . We have measured 3-dB band- widths of 2.4 and 3.5 GHz at 5 and 15 V reverse bias, respectively, and observed an open-eye diagram at 5 gigabit/s with 5 V bias. C 2011 Society of Photo-Optical Instrumentation Engineers (SPIE).

Silicon-on-insulator microring resonator defect-based photodetector with 3.5-GHz bandwidth