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The effect of p-type doping of the donor layer with 2,3,5,6-tetrafluoro- 7,7,8,8-tetracyanoquinodimethane (F4TCNQ) on the performance of planar pn-heterojunction organic photovoltaic devices using 4,4  ,4  -tris(3-methylphenyl(phenyl)amino)triphenylamine (m-MTDATA) or 4,4  ,4  -tris(2-naphthyl(phenyl)amino)triphenylamine (2-TNATA) as an elec- tron donor and C60 as an electron acceptor was studied. It was found that doping of the donor layer with F4TCNQ increases both the short-circuit photocurrent and the fill fac- tor by 1.7 to 2.0 times and 1.5 to 1.6 times, respectively, but reduces the open-circuit voltage, resulting in the enhancement of power conversion efficiency by 1.6 to 1.7 times. These features caused by the doping are attributed to the decrease in the bulk resis- tance of the electron donor layer as a result of the p-type doping. The decrease in the open-circuit voltage was partly compensated by incorporation of a thin layer of undoped m-MTDATA on the ITO electrode, and hence, the power conversion efficiency was further

journal of photonics for energy

The effect of &lt;italic&gt;p&lt;/italic&gt;-type doping on the performance of organic thin-film photovoltaic devices— m-MTDATA/C&lt;sub&gt;60&lt;/sub&gt; and 2-TNATA/C&lt;sub&gt;60&lt;/sub&gt; systems