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Sb-based dual-band detectors were fabricated and characterized. The first band consists of an InGaAsSb pn junction for long wavelength detection, while the second band consists of a GaSb pn junction for shorter wavelength detection. Both bands were grown, lattice-matched to a GaSb substrate, using metal-organic vapor phase epitaxy. Three metal contacts were deposited to access the individual junctions. Spectral response measurements indicated either independent operation of both detectors simultaneously, or bias selective operation for one detector while serially accessing both devices.

Sb-based two-color photodetector fabrication and characterization