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We report on the growth and characterization of Ge-doped \b{eta}-Ga2O3 thinfilms using a solid germanium source. \b{eta}-Ga2O3 thin films were grown usinga low-pressure chemical vapor deposition (LPCVD) reactor with either an oxygenor gallium delivery tube. Films were grown on 6 degree offcut sapphire and(010) \b{eta}-Ga2O3 substrates with growth rates between 0.5 - 22 {\mu}m/hr. Bycontrolling the germanium vapor pressure, a wide range of Hall carrierconcentrations between 10^17 - 10^19 cm-3 were achieved. Low-temperature Halldata revealed a difference in donor incorporation depending on the reactorconfiguration. At low growth rates, germanium occupied a single donor energylevel between 8 - 10 meV. At higher growth rates, germanium dopingpredominantly results in a deeper donor energy level at 85 meV. This work showsthe effect of reactor design and growth regime on the kinetics of impurityincorporation. Studying donor incorporation in \b{eta}-Ga2O3 is important forthe design of high-power electronic devices.

N-type doping of LPCVD-grown \b{eta}-Ga2O3 thin films using solid-source germanium