The Si3N4/TiN Interface: 4. Si3N4/TiN(001) Grown with a −250 V Substrate Bias and Analyzed In situ using Angle-resolved X-ray Photoelectron Spectroscopy | Zendy

AI Assistant Blog Pricing

The Si3N4/TiN Interface: 4. Si3N4/TiN(001) Grown with a −250 V Substrate Bias and Analyzed In situ using Angle-resolved X-ray Photoelectron Spectroscopy

Details

The content you want is available to Zendy users.Already have an account? Click here. to sign in.