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As aggressive scaling of integrated circuits continues into the next century, insulators with dielectric constants higher than SiO2 with different local bonding arrangements will be required to increase gate dielectric capacitance in field effect transistor devices. An important issue in semiconductor device physics is determining whether differences between the bonding at (i) Si–SiO2 interfaces and (ii) interfaces between crystalline Si and alternative gate dielectric materials will result in increased densities of electrically active defects at the alternative dielectric interfaces, thereby limiting targeted levels of performance and reliability. In particular, it is important to understand from a chemical bonding perspective why Si–SiO2 interfaces display both low defect densities and high reliability, while other interfaces such as Si–Si3N4 with similar bonding chemistry, display defect densities that are at least two orders of magnitude higher. Building on previously established criteria for formatio...

Bonding constraint-induced defect formation at Si-dielectric interfaces and internal interfaces in dual-layer gate dielectrics