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Surface dynamics dominate the incorporation of charged, AsGa+, and neutral, AsGa0, antisite arsenic, and the temporal variation of reflection high-energy electron diffraction (RHEED) intensity in the low-temperature molecular beam epitaxy of (100) gallium arsenide (GaAs). A rate equation model is proposed which includes the presence and dynamics of a physisorbed arsenic (PA) layer riding the growth surface. The PA layer dictates the incorporation and concentration of AsGa+ and AsGa0. Additionally, it influences the RHEED oscillations (ROs) behavior and the RO’s dependence on its coverage through its contribution to the reflected intensity. The model results for the dependence of AsGa+ and AsGa0 concentrations on beam equivalent pressure (BEP) and growth temperature are in good agreement with experimental data. The experimental observations can be explained based on the saturation of the PA coverage at one monolayer and the competing rate processes such as the AsGa incorporation into and evaporation from t...

journal of vacuum science and technology b microelectronics and nanometer structures processing measurement and phenomena

Low-temperature molecular beam epitaxy of GaAs: A theoretical investigation of antisite incorporation and reflection high-energy diffraction oscillations