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Nanolaminated Al2O3/HfO2 thin films as well as single Al2O3 and HfO2 layershave been grown as gate dielectrics by Plasma Enhanced Atomic Layer Deposition(PEALD) technique on silicon carbide (4H-SiC) substrates. All the threedielectric films have been deposited at temperature as low as 250{\deg}C, witha total thickness of about 30 nm and in particular, the nanolaminatedAl2O3/HfO2 films have been fabricated by alternating nanometric Al2O3 and HfO2layers. The structural characteristics and dielectrical properties of thenanolaminated Al2O3/HfO2 films have been evaluated and compared to those of theparent Al2O3 and HfO2 single layers. Moreover, the structural properties andtheir evolution upon annealing treatment at 800{\deg}C have been investigatedas preliminar test for their possible implementation in the device fabricationflow-chart. On the basis of the collected data, the nanolaminated filmsdemonstrated to possess promising dielectric behavior with respect to thesimple oxide layers.

Nanolaminated Al2O3/HfO2 dielectrics for silicon carbide based devices