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Reactive transition-metal (TM) nitride film growth employing bias-synchronized high power impulse magnetron sputtering (HiPIMS) requires a detailed knowledge of the time evolution of metal- and gas-ion fluxes incident at the substrate plane in order to precisely tune momentum transfer and, hence, provide the recoil density and energy necessary to eliminate film porosity at low deposition temperatures without introducing significant film stress. Here, the authors use energy- and time-dependent mass spectrometry to analyze the evolution of metal- and gas-ion fluxes at the substrate plane during reactive HiPIMS sputtering of groups IVb and VIb TM targets in Ar/N2 atmospheres. The time- and energy-integrated metal/gas ion ratio NMe+/Ng+ incident at the substrate is significantly lower for group IVb TMs (ranging from 0.2 for Ti to 0.9 for Hf), due to high N2 reactivity which results in severely reduced target sputtering rates and, hence, decreased rarefaction. In contrast, for less reactive group VIb metals, s...

journal of vacuum science and technology a vacuum surfaces and films

Time evolution of ion fluxes incident at the substrate plane during reactive high-power impulse magnetron sputtering of groups IVb and VIb transition metals in Ar/N2