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The development of SiC wafers with properties suitable for electronic device fabrication is now well established commercially. A critical issue for developing metal–oxide–semiconductor field effect transistor devices of SiC is the choice of dielectric materials for surface passivation and insulating coatings. Although SiO2 grown thermally on SiC is a possibility for the gate dielectric, this system has a number of problems related to the higher band gap of SiC, which energetically favors more interface states than for SiO2 on Si, and the low dielectric constant of SiO2 leading to 2.5× higher electric fields across the oxide than in the surface of SiC, and to a premature breakdown at the higher fields and higher temperatures that SiC devices are designed to operate under. As a replacement for SiO2, amorphous Al2O3 thin film coatings have some strong advocates, both for n- and p-type SiC, due to the value of its band gap and the position of its band edges with respect to the band edges of the underlying sem...

Growth of aluminum oxide on silicon carbide with an atomically sharp interface