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Thermal atomic layer etching (ALE) of crystalline aluminum nitride (AlN) films was demonstrated using sequential, self-limiting reactions with hydrogen fluoride (HF) and tin(II) acetylacetonate [Sn(acac)2] as the reactants. Film thicknesses were monitored versus number of ALE reaction cycles at 275 °C using in situ spectroscopic ellipsometry (SE). A low etch rate of ∼0.07 A/cycle was measured during etching of the first 40 A of the film. This small etch rate corresponded with the AlOxNy layer on the AlN film. The etch rate then increased to ∼0.36 A/cycle for the pure AlN films. In situ SE experiments established the HF and Sn(acac)2 exposures that were necessary for self-limiting surface reactions. In the proposed reaction mechanism for thermal AlN ALE, HF fluorinates the AlN film and produces an AlF3 layer on the surface. The metal precursor, Sn(acac)2, then accepts fluorine from the AlF3 layer and transfers an acac ligand to the AlF3 layer in a ligand-exchange reaction. The possible volatile etch produc...

journal of vacuum science and technology. a. vacuum, surfaces, and films

Thermal atomic layer etching of crystalline aluminum nitride using sequential, self-limiting hydrogen fluoride and Sn(acac)2 reactions and enhancement by H2 and Ar plasmas