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Hf1-x-yAlxSiyN (0 less than= x less than= 0.14, 0 less than= y less than= 0.12) single layer and multilayer films are grown on Si(001) at 250 degrees C using ultrahigh vacuum magnetically unbalanced reactive magnetron sputtering from a single Hf0.6Al0.2Si0.2 target in mixed 5%-N-2/Ar atmospheres at a total pressure of 20 mTorr (2.67 Pa). The composition and nanostructure of Hf1-x-yAlxSiyN films are controlled by varying the energy Ei of the ions incident at the film growth surface while maintaining the ion-to-metal flux ratio constant at eight. Switching E-i between 10 and 40 eV allows the growth of Hf0.78Al0.10Si0.12N/Hf0.78Al0.14Si0.08N multilayers with similar layer compositions, but in which the Si bonding state changes from predominantly Si-Si/Si-Hf for films grown with E-i = 10 eV, to primarily Si-N with E-i = 40 eV. Multilayer hardness values, which vary inversely with bilayer period Lambda, range from 20 GPa with Lambda = 20 nm to 27 GPa with Lambda = 2 nm, while fracture toughness increases directly with Lambda. Multilayers with Lambda = 10nm combine relatively high hardness, H similar to 24GPa, with good fracture toughness. (C) 2015 American Vacuum Society.<p>Funding Agencies|U.S. Department of Energy [DE-FG02-07ER46453, DE-FG02-07ER46471]; Swedish Foundation for Strategic Research project Designed Multicomponent Coatings, MultiFil; U.S. Department of Defense Science, Mathematics, and Research for Transformation program; Swedish Government Strategic Research Area Grant (SFO MAT-LiU) on Advanced Functional Materials; Swedish Research Council (VR) [2009-00971]</p

journal of vacuum science and technology. a. vacuum, surfaces, and films

Novel hard, tough HfAlSiN multilayers, defined by alternating Si bond structure, deposited using modulated high-flux, low-energy ion irradiation of the growing film