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The gas field ion microscope was used to investigate helium and neon ion beam induced etching of nickel as a candidate technique for extreme ultraviolet (EUV) lithography mask editing. No discernable nickel etching was observed for room temperature helium exposures at 16 and 30 keV in the dose range of 1 x 10(15)-1 x 10(18) He+/cm(2); however, transmission electron microscopy (TEM) revealed subsurface damage to the underlying Mo-Si multilayer EUV mirror. Subsequently, neon beam induced etching at 30 keV was investigated over a similar dose range and successfully removed the entire 50 nm nickel top absorber film at a dose of similar to 3 x 10(17) Ne+/cm(2). Similarly, TEM revealed subsurface damage in the underlying Mo-Si multilayer. To further understand the helium and neon damage, the authors simulated the ion-solid interactions with our EnvizION Monte-Carlo model, which reasonably correlated the observed damage and bubble formation to the nuclear energy loss and the implanted inert gas concentration, respectively. A critical nuclear energy density loss of similar to 80 eV/nm(3) and critical implant concentration of similar to 2.5 x 10(20) atoms/cm(3) have been estimated for damage generation in the multilayer structure. (C) 2014 American Vacuum Society

Focused helium and neon ion beam induced etching for advanced extreme ultraviolet lithography mask repair