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In this study, InAs was deposited on GaAs (100) and GaAs (111)B 2° → ⟨2-1-1⟩ substrates for the purpose of differentiating the InAs growth mode stemming from strain and then analyzed using in-situ reflection high energy electron diffraction, scanning electron microscopy, Raman spectroscopy, reflectance spectroscopy, and atomic force microscopy. The procession of InAs deposition throughout a range of deposition conditions results in assorted forms of strain relief revealing that, despite lattice mismatch for InAs on GaAs (approximately 7%), InAs does not necessarily result in typical quantum dot/wire formation on (111) surfaces, but instead proceeds two-dimensionally due primarily to the surface orientation.

Orientation-dependent pseudomorphic growth of InAs for use in lattice-mismatched mid-infrared photonic structures