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Undoped and indium-doped ZnO films have been deposited by atmospheric spatial atomic-layer-deposition (spatial-ALD). The stability of their electrical, optical, and structural properties has been investigated by a damp-heat test in an environment with 85% relative humidity at 85 °C. The resistivity of the ZnO films increased during damp-heat exposure mainly due to a sharp decrease in the carrier mobility, while the carrier density and transparency degraded only partially. The increase in resistivity can be ascribed to a degradation of the structural properties of ZnO films, resulting in a higher level of tensile stress, as indicated by x-ray diffraction analysis, and in a reduced near-ultravoilet emission level in their photoluminescence spectra. Al2O3 thin (25–75 nm) films grown by spatial-ALD at 0.2 nm/s are used as moisture barrier to effectively enhance the stability of the electrical and structural properties of the films.

On the environmental stability of ZnO thin films by spatial atomic layer deposition