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Resistive switching (RS) effect observed in capacitor-likemetal/insulator/metal junctions belongs to the most promising candidates fornext generation of memory cell technology. It is based upon a sudden change ofthe junction resistance caused by an electric field applied to the metalelectrodes. The aim of this work was to study this effect on the structuremetal/YBCO6/YBCO7, where YBCO7 is a metallic phase and YBCO6 is an insulatorphase which arises spontaneously by out-diffusion of oxygen from a fewnanometers wide YBCO surface layer. Oriented YBa2Cu3O7 thin films were preparedby the method of magnetron sputtering and consequently planar structures withmetal-YBCO junction were made by the means of the optical lithography, ionetching and vacuum evaporation. On these junctions we have studied thetemperature dependence of the RS effect with I-V and dI/dV-V transportmeasurements down to liquid He temperature. We have determined temperaturedependence of the RS effect threshold voltage in the temperature range 100-300K and showed that this dependency is compatible with common idea of oxygen ionsmigration under electric field within the YBCO surface layer.

Temperature dependence of the resistance switching effect studied on the metal/YBa2Cu3O6+x planar junctions