English (United Kingdom)

https://curated-unify.zendy.io/wp-json/zendy-region/v1/featured_content/oa?rat=en

https://curated-unify.zendy.io/wp-json/zendy-region/v1/highlighted_journal/

Global: Zendy Plus annual

Presents the access of premium content as premium feature

Premium Content

Presents the keyphrase highlighting as premium feature

Keyphrase Highlighting

Presents the summarisation as premium feature

Summarisation

Insights

Presents the pdf analysis as premium feature

PDF Analysis

Presents the zaia usage as premium feature

ZAIA

Global: Zendy Tools annual

Global: Zendy Free Plan

Global: Zendy Tools monthly

Global: Zendy Plus monthly

We investigate a wafer scale tunnel junction fabrication method, where aplasma etched via through a dielectric layer covering bottom Al electrodedefines the tunnel junction area. The ex-situ tunnel barrier is formed byoxidation of the bottom electrode in the junction area. Room temperatureresistance mapping over a 150 mm wafer give local deviation values of thetunnel junction resistance that fall below 7.5 % with an average of 1.3 %. Thedeviation is further investigated by sub-1 K measurements of a device, whichhas one tunnel junction connected to four arrays consisting of N junctions (N =41, junction diameter 700 nm). The differential conductance is measured insingle-junction and array Coulomb blockade thermometer operation modes. Byfitting the experimental data to the theoretical models we found an upper limitfor the local tunnel junction resistance deviation of ~5 % for the array of2N+1 junctions. This value is of the same order as the minimum detectabledeviation defined by the accuracy of our experimental setup.

Ex-situ Tunnel Junction Process Technique Characterized by Coulomb Blockade Thermometry