English (United Kingdom)

https://curated-unify.zendy.io/wp-json/zendy-region/v1/featured_content/oa?rat=en

https://curated-unify.zendy.io/wp-json/zendy-region/v1/highlighted_journal/

Zendy Open

Presents the pdf analysis as premium feature

PDF Analysis

Insights

Presents the summarisation as premium feature

Summarisation

Presents the keyphrase highlighting as premium feature

Keyphrase Highlighting

Presents the zaia usage as premium feature

ZAIA

Zendy Tools

Zendy Plus

Presents the access of premium content as premium feature

Premium Content

The surface and interface sensitive technique of optical second-harmonic generation (SHG) has been applied spectroscopically and time-resolved before, during, and after low energy (70–1000 eV) Ar+-ion bombardment of H-terminated Si(100). The photon energy range of the fundamental radiation was ℏω=0.76–1.14 eV. Besides physical sputtering of the silicon, ion bombardment of crystalline silicon damages and amorphizes the top layer of the sample and thereby creates a layered structure of amorphous silicon (a-Si) on crystalline silicon. The SHG radiation, which is sensitive to the Ar+-ion flux, ion energy, and the presence of reactive gas species, originates from the top surface of the sample and from the interface between a-Si and c-Si. From a comparison with the SHG results obtained at a fundamental radiation of ℏω=1.3–1.7 eV, it is concluded that the SHG radiation during and after creation of this structure dominantly originates from the tails of electronic transitions in the E0′/E1 energy region rather tha...

Amorphization of Si(100) by Ar+-ion bombardment studied with spectroscopic and time-resolved second-harmonic generation