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InGaAsP/InP quantum wells (QW) ridge waveguide lasers were fabricated for theevaluation of Ga+ Focused Ion Beam (FIB) milling of mirrors. Electrical andoptical proprieties were investigated. A 7% increment in threshold current, a17% reduction in external quantum efficiency and 15 nm blue shift in theemission spectrum were observed after milling as compared to the as cleavedfacet result. Annealing in inert atmosphere partially revert these effectsresulting in 4% increment in threshold current, 11% reduction in externalefficiency and 13 nm blue shift with the as cleaved result. The current-voltagebehavior after milling and annealing shows a very small increase in leakagecurrent indicating that optical damage is the main effect of the millingprocess.

Effects of Ga+ milling on InGaAsP Quantum Well Laser with mirrors etched by Focused Ion Beam