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The authors describe a remote plasma atomic layer deposition reactor (Oxford Instruments FlexAL™) that includes an inductively coupled plasma source and a load lock capable of handling substrates up to 200mm in diameter. The deposition of titanium nitride (TiN) and hafnium oxide (HfO2) is described for the combination of the metal-halide precursor TiCl4 and H2–N2 plasma and the combination of the metallorganic precursor Hf[N(CH3)(C2H5)]4 and O2 plasma, respectively. The influence of the plasma exposure time and substrate temperature has been studied and compositional, structural, and electrical properties are reported. TiN films with a low Cl impurity content were obtained at 350°C at a growth rate of 0.35A∕cycle with an electrical resistivity as low as 150μΩcm. Carbon-free (detection limit <2at.%) HfO2 films were obtained at a growth rate of 1.0A∕cycle at 290°C. The thickness and resisitivity nonuniformity was <5% for the TiN and the thickness uniformality was <2% for the HfO2 films as determined over 200mm wafers.The authors describe a remote plasma atomic layer deposition reactor (Oxford Instruments FlexAL™) that includes an inductively coupled plasma source and a load lock capable of handling substrates up to 200mm in diameter. The deposition of titanium nitride (TiN) and hafnium oxide (HfO2) is described for the combination of the metal-halide precursor TiCl4 and H2–N2 plasma and the combination of the metallorganic precursor Hf[N(CH3)(C2H5)]4 and O2 plasma, respectively. The influence of the plasma exposure time and substrate temperature has been studied and compositional, structural, and electrical properties are reported. TiN films with a low Cl impurity content were obtained at 350°C at a growth rate of 0.35A∕cycle with an electrical resistivity as low as 150μΩcm. Carbon-free (detection limit <2at.%) HfO2 films were obtained at a growth rate of 1.0A∕cycle at 290°C. The thickness and resisitivity nonuniformity was <5% for the TiN and the thickness uniformality was <2% for the HfO2 films as determined over 20...

Deposition of TiN and HfO2 in a commercial 200mm remote plasma atomic layer deposition reactor