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High-reflectance group III-nitride distributed Bragg reflectors (DBRs) weredeposited by MOCVD on Si (111) substrates. A reflectance greater than 96% wasdemonstrated for the first time for an AlN/GaN DBR with a stop-band centered inthe blue-green range of the visible spectrum. Crack-free GaN cap layers weregrown on the DBR structures to demonstrate the opportunity to build III-nitrideoptoelectronic devices in this material. The DBR structure was undersignificant strain due to growth on a mismatched substrate although the GaN caplayer was shown to be strain free.

Metalorganic chemical-vapor deposition of high-reflectance III-nitride distributed Bragg reflectors on Si substrates