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Single wavelength ellipsometry and atomic force microscopy (AFM) have been applied in a well-calibrated beam-etching experiment to characterize the dynamics of surface roughening induced by chemical etching of a ∼12nm amorphous silicon (a-Si) top layer and the underlying crystalline silicon (c-Si) bulk. In both the initial and final phase of etching, where either only a-Si or only c-Si is exposed to the XeF2 flux, we observe a similar evolution of the surface roughness as a function of the XeF2 dose proportional to D(XeF2)β with β≈0.2. In the transition region from the pure amorphous to the pure crystalline silicon layer, we observe a strong anomalous increase of the surface roughness proportional to D(XeF2)β with β≈1.5. Not only the growth rate of the roughness increases sharply in this phase, also the surface morphology temporarily changes to a structure that suggests a cusplike shape. Both features suggest that the remaining a-Si patches on the surface act effectively as a capping layer which causes th...

Surface roughness in XeF2 etching of a-Si∕c-Si(100)