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We report on the achievement of a two-dimensional electron gas in completelyundoped In[0.75]Al[0.25]As/In[0.75]Ga[0.25]As metamorphic quantum wells. Usingthese structures we were able to reduce the carrier density, with respect toreported values in similar modulation-doped structures. We found experimentallythat the electronic charge in the quantum well is likely due to a deep-leveldonor state in the In[0.75]Al[0.25]As barrier band gap, whose energy lieswithin the In[0.75]Ga[0.25]As/In[0.75]Al[0.25]As conduction band discontinuity.This result is further confirmed through a Poisson-Schroedinger simulation ofthe two-dimensional electron gas structure.Comment: 17 pages, 6 figures, to be published in J. Vac. Sci. Technol.

Two-dimensional electron gas formation in undoped In0.75Ga0.25As/In0.75Al0.25As quantum wells