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A remote expanding thermal plasma operated on an Ar–H2–N2–SiH4 mixture has been studied by several plasma diagnostics to obtain insight into the plasma processes and the hydrogenated amorphous silicon nitride (a-SiNx:H) growth mechanism from the N2–SiH4 reactant mixture. From Langmuir probe measurements, ion mass spectrometry, and threshold ionization mass spectrometry, it is revealed that the Ar–H2–N2 operated plasma source leads mainly to N and H radicals in the downstream region. The H radicals react with the SiH4 admixed downstream creating a high SiH3 density as revealed by cavity ringdown spectroscopy. By cavity ringdown measurements, it is also shown that Si and SiH have a much lower density in the downstream plasma and that these radicals are of minor importance for the a-SiNx:H growth process. The ground-state N radicals from the plasma source do not react with the SiH4 injected downstream leading to a high N density under the a-SiNx:H deposition conditions as revealed by threshold ionization mas...

Plasma diagnostic study of silicon nitride film growth in a remote Ar–H2–N2–SiH4 plasma: Role of N and SiHn radicals