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In this paper, we studied microphase separation on and pattern transfer to graphene substrates using commercially obtained poly(styrene)-block-poly(methyl methacrylate) (PS-b-PMMA) block copolymers (BCP) possessing lamellar and cylindrical morphologies. Self-assembly was achieved using a thermal annealing technique, and well-arranged microphase separated patterns were obtained. Insertion of alumina oxide into the patterns followed by etch treatments allowed pattern transfer to the substrate surface. After pre-studies were carried out and parameters were optimized on SiO2 coated Si surfaces, experiments were continued on SiO2 coated graphene surfaces. Characterization was performed mainly by atomic force microscope (AFM) for observing microphase separated patterns and etching effects. This study provides further application of block copolymers on new materials for semiconductor and other potential technological (e.g. sensor, energy storage) applications.

Microphase Separation of PS-b-PMMA Block Copolymer and Hard Mask Formation on Graphene