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Electrical conduction and relaxation phenomena in bismuth borate glasses inthe composition 2Bi2O3-B2O3 (Bi4B2O9) were investigated. Dielectric studiescarried out on these glasses revealed near constant loss (NCL) response in the1 kHz to 1MHz frequency range at moderately high temperatures (300-450K)associated with relatively low loss (D=0.006) and high dielectric constant({\epsilon}r'=37) at 1kHz,300K. The variation in AC conductivity withtemperature at different frequencies showed a cross over from NCL responsecharacterized by local ion vibration within the potential well to universalJoncher's power law dependence triggered by ion hopping between potential wellsor cages. Thermal activation energy for single potential well was found to be0.48 \pm 0.05eV from cross over points. Ionic conduction and relaxationprocesses were rationalized by modulus formalism. The promising dielectricproperties (relatively high {\epsilon}r' and low D) of the present glasses wereattributed to high density (93 % of its crystalline counterpart), highpolarizability and low mobility associated with heavy metal cations, Bi3+.

Near constant loss dielectric response in 2Bi2O3-B2O3 glasses