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We report on In 0.85 Ga 0.15 As nanowire MOSFETs (NWFETs) with record performance in several key VLSI metrics. These devices exhibit I ON  = 555 &#x00B5;A/&#x00B5;m (at I OFF  = 100 nA/&#x00B5;m and V DD  = 0.5 V), I ON  = 365 &#x00B5;A/&#x00B5;m (at I OFF  = 10 nA/&#x00B5;m and V DD  = 0.5 V) and a quality factor Q = g m /SS of 40, all of which are the highest reported for a III&#x2013;V as well as silicon transistor. Furthermore, a highly scalable, self-aligned gate-last fabrication process is utilized, with a single nanowire as the channel. The devices use a 45&#x00B0; angle between the nanowire and the contacts, which allows for up to a 1.4 times longer gate length at a given pitch.

InGaAs nanowire MOSFETs with I ON = 555 µA/µm at I OFF = 100 nA/µm and V DD = 0.5 V