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We demonstrate for the first time full-scale integration of top-pinned perpendicular MTJ on 300 mm wafer using CMOS-compatible processes for spin-orbit torque (SOT)-MRAM architectures. We show that 62 nm devices with a W-based SOT underlayer have very large endurance (&gt; 5&#x00D7;10<sup>10</sup>), sub-ns switching time of 210 ps, and operate with power as low as 300 pJ.

SOT-MRAM 300MM Integration for Low Power and Ultrafast Embedded Memories