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This paper explores the design of 3-D-integrated hybrid memory by conductive-bridge random-access-memory (CBRAM). Considering internal states, height, and radius of the conductive bridge of one CBRAM device, an accurate CBRAM device model is developed for CBRAM-crossbar-based nonvolatile memory design with efficient estimation of area, access time, and power. Based on this design platform, one 3-D-integrated hybrid memory is designed by stacking one tier of CBRAM-crossbar with tiers of static random access memory (SRAM) and dynamic random access memory (DRAM), where the tier of CBRAM-crossbar is deployed for data retention during power gating of SRAM/DRAM tiers. One corresponding block-level data retention is developed to only write back dirty data from SRAM/DRAM to CBRAM-crossbar. When compared with phase-change random-access-memory-based system-level data retention, our design achieves    $11\times$    faster data-migration speed and    $10\times$    less data-migration power. When compared with ferroelectric random-access-memory-based bit-level data retention, our design also achieves    $17\times$    smaller area and    $56\times$    smaller power under the same data-migration speed.

Nonvolatile CBRAM-Crossbar-Based 3-D-Integrated Hybrid Memory for Data Retention