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Guiding and manipulating GHz frequency acoustic waves in    $\mu \text{m}$   -scale waveguides and resonators open up new degrees of freedom to manipulate radio frequency (RF) signals in chip-scale platforms. A critical requirement for enabling high-performance devices is the demonstration of low acoustic dissipation in these highly confined geometries. In this work, we show that gallium nitride (GaN) on silicon carbide (SiC) supports low-loss acoustics by demonstrating acoustic microring resonators with frequency-quality factor (   $\textit {fQ}$   ) products approaching    ${10}^{{13}}$    Hz at 3.4 GHz. The low dissipation measured exceeds the    $\textit {fQ}$    bound set by the simplified isotropic Akhiezer material damping limit of GaN. We use this low-loss acoustics platform to demonstrate spiral delay lines with on-chip RF delays exceeding    $2.5 ~\mu \text{s}$   , corresponding to an equivalent electromagnetic delay of    $\approx 750$    m. Given GaN is a well-established semiconductor with high electron mobility, this work opens up the prospect of engineering traveling wave acoustoelectric interactions in    $\mu \text{m}$   -scale waveguide geometries, with associated implications for chip-scale RF signal processing.

Low-Loss GHz Frequency Phononic Integrated Circuits in Gallium Nitride for Compact Radio Frequency Acoustic Wave Devices