English (United Kingdom)

https://curated-unify.zendy.io/wp-json/zendy-region/v1/featured_content/oa?rat=en

https://curated-unify.zendy.io/wp-json/zendy-region/v1/highlighted_journal/

Global: Zendy Plus annual

Presents the access of premium content as premium feature

Premium Content

Presents the keyphrase highlighting as premium feature

Keyphrase Highlighting

Presents the summarisation as premium feature

Summarisation

Insights

Presents the pdf analysis as premium feature

PDF Analysis

Presents the zaia usage as premium feature

ZAIA

Global: Zendy Tools annual

Global: Zendy Free Plan

Global: Zendy Tools monthly

Global: Zendy Plus monthly

The superjunction MOSFETs with low RDS(on) and fast-switching speed are expected to achieve high efficiency and high-switching-frequency operation in three-phase voltage-source converters. In this letter, experimental measurements of MOSFET switching behavior and losses in a mixed-technology (silicon MOSFET, silicon superjunction-MOSFET, and silicon carbide diode) three-level neutral-point-clamped phase-leg circuit are presented. The effects of superjunction MOSFETs' nonlinear output capacitance and silicon MOSFET intrinsic diode reverse recovery are identified, acting to limit the achievable switching speed and efficiency. A significant high voltage is observed across the superjunction MOSFET occurring under no-load conditions. This letter has revealed that the superjunction MOSFETs cannot be directly used in voltage-source converters (e.g., to replace IGBTs) to achieve higher switching speed due to its nonlinear output capacitance, which creates significant high voltage across the inner device and extra losses.

Superjunction MOSFETs in Voltage-Source Three-Level Converters: Experimental Investigation of Dynamic Behavior and Switching Losses