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Progress in the fields of Cd(Zn)Te detector development, microelectronics, and interconnection technologies open the way for a new generation of instruments for physics and astrophysics applications in the energy range from 1 to 1000 keV. Cd(Zn)Te based instruments operating in the range between -20 and 20/spl deg/C will offer high spatial resolution (pixel size ranging from 300/spl times/300 /spl mu/m/sup 2/ to few mm/sup 2/), high spectral response, and high detection efficiency. To reach these goals, reliable, highly integrated, low-noise, and low-power consumption electronics is mandatory. Our group is currently developing a new full custom ASIC detector front-end named IDeF-X, for modular spectro-imaging systems based on the use of Cd(Zn)Te detectors. We present here the first version of IDeF-X that consists of a set of ten low-noise charge sensitive preamplifiers (CSA). It has been manufactured using the AMS 0.35 /spl mu/m CMOS technology. The CSAs are designed to be DC coupled to detectors having low dark current at room temperature. We have optimized the various preamplifiers to match detector capacitances in the range from 0.5 to 30 pF.

IDeF-X ASIC for Cd(Zn)Te spectro-imaging systems