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A new GaN Nano-Schottky diode rectifier is introduced with capacitance per unit gate width of 381 fF/mm, and series resistance is 0.45 <inline-formula> <tex-math notation="LaTeX">$\Omega \cdot $ </tex-math></inline-formula>mm leading to transition frequency (<inline-formula> <tex-math notation="LaTeX">$f_{\mathrm {T}}$ </tex-math></inline-formula>) of 928 GHz. The associated forward current is 1.8 A/mm with breakdown voltage of 30 V. The new device was modeled and an on-wafer voltage doubler rectenna circuit was designed and fabricated on GaN/SiC wafers. A <inline-formula> <tex-math notation="LaTeX">$W$ </tex-math></inline-formula>-band small and large signal characterization was performed to highlight the integrated rectenna performance. An RF-dc efficiency of 61.5&#x0025; was measured at 95 GHz with associated input power density of 3.61 kW/m<sup>2</sup>. The latter represents a 15.7&#x0025; increase in efficiency over the state-of-the-art <inline-formula> <tex-math notation="LaTeX">$W$ </tex-math></inline-formula>-band rectenna circuit. The input power handling has also increased by a factor of 1.5 and 9.5 from reported GaAs and CMOS-based rectenna circuits at 94 GHz. The result highlights key improvements in the rectenna metrics for wireless power beaming demonstrations of the future.

ieee transactions on microwave theory and techniques

61.5&#x0025; Efficiency and 3.6 kW/m<sup>2</sup> Power Handling Rectenna Circuit Demonstration for Radiative Millimeter Wave Wireless Power Transmission

61.5% Efficiency and 3.6 kW/m2 Power Handling Rectenna Circuit Demonstration for Radiative Millimeter Wave Wireless Power Transmission

61.5% Efficiency and 3.6 kW/m² Power Handling Rectenna Circuit Demonstration for Radiative Millimeter Wave Wireless Power Transmission