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This article presents a 135-150-GHz Schottky diode-based bias-less frequency tripler based on SU-8 micromachined WR-5 waveguides. The waveguides consist of five 432-&#x03BC;m-thick silver-plated SU-8 layers, which house the diode chip and form the output matching network. The input matching circuit is realized in a computer numerical control (CNC) milled waveguide filter, which also provides support and thermal sink to the SU-8 waveguides. Considering the low thermal conductivity of the SU-8 material, auxiliary metallic thermal paths are designed, and the impact of these is discussed through thermal modeling. The thermal simulations show that under 50-mW power dissipation in the diode anodes, the maximum temperature of the SU-8 tripler is predicted to be 346 K at the diode junction, only 7 K higher than in an entirely metal equivalent. The tripler was measured to have a conversion loss of 16-18 dB and the input return loss is better than 18 dB. This work demonstrates that SU-8 micromachined waveguides can be used to package high-frequency semiconductor components, which, like other photolithography-based processes such as silicon deep reactive ion etching (Si-DRIE), has the potential for submicrometer feature resolution.

A 135–150-GHz Frequency Tripler Using SU-8 Micromachined WR-5 Waveguides