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To realize the kilogram using the X-ray crystal density method, 28Si crystals grown by the floating zone method were employed. Samples cut from two 28Si crystals, the AVO28 crystal (Si28-10Pr11 crystal) and the Si28-23Pr11 crystal, were analyzed by means of an electron paramagnetic resonance (EPR) spectroscopy. The samples were prepared by mirror polishing and subsequent etching using tetramethylammonium hydroxide (TMAH) solution. TMAH etching eliminates signals from the mechanically damaged surface layers of amorphous silicon and allows for the observation of small signals from vacancy defects in bulk crystals. In the study, the signal level of the vacancy defects was below the detection limit of <inline-formula> <tex-math notation="LaTeX">$1 \times 10^{12}$ </tex-math></inline-formula> cm<inline-formula> <tex-math notation="LaTeX">$^{-3}$ </tex-math></inline-formula>, and the amount of vacancy correction required to realize the kilogram was estimated to be 0.00(23) <inline-formula> <tex-math notation="LaTeX">$\mu \text{g}$ </tex-math></inline-formula> for both 28Si crystals. Therefore, it was concluded that the 39(21) <inline-formula> <tex-math notation="LaTeX">$\mu \text{g}$ </tex-math></inline-formula> inconsistency between the kilogram realizations achieved using the two 28Si crystals reported thus far cannot be explained by the existence of vacancy defects that are EPR active in the dark or under illumination.

Determination of Defect Concentrations in ²⁸Si Crystals Using EPR for the Realization of the Kilogram