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This article presents a global shutter (GS) high signal-to-noise ratio (SNR) and a high-frame-rate CMOS image sensor (CIS) for <italic>in situ</italic> fluid concentration distribution measurements using absorption imaging. The pixel consists of a ultraviolet (UV)-visible-near infrared (NIR) waveband pinned photodiode (PD) with high robustness against UV light irradiation for various measurement objects, two-stage lateral overflow integration capacitors (LOFIC) for high dynamic range and high SNR, and a voltage-domain memory bank for GS. The developed prototype CIS with 22.4-<inline-formula> <tex-math notation="LaTeX">$\mu \text{m}$ </tex-math></inline-formula> pitch pixels exhibited 69.7-dB maximum SNR, 123-dB dynamic range, and 1000-frames/s maximum frame rate under single exposure GS and successfully captured images of dynamic movement of NO<sub>2</sub> gas concentration distribution in the vacuum chamber for 300-mm-diameter wafers.

A 70-dB SNR High-Speed Global Shutter CMOS Image Sensor for in Situ Fluid Concentration Distribution Measurements