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For decades, there is no unified model developed for Silicon carriers from 4 K to above room temperature. In this article, a unified undoped silicon low field and high field mobility model for both electron in the <inline-formula> <tex-math notation="LaTeX">$\langle 100\rangle $ </tex-math></inline-formula> and <inline-formula> <tex-math notation="LaTeX">$\langle 111\rangle $ </tex-math></inline-formula> directions from 8 to 300 K and 430 K, respectively, and hole in the <inline-formula> <tex-math notation="LaTeX">$\langle 100\rangle $ </tex-math></inline-formula> direction from 6 to 430 K is proposed and calibrated to the experiment. It is found that the Canali high field saturation model is sufficient to fit the <inline-formula> <tex-math notation="LaTeX">$\langle 111\rangle $ </tex-math></inline-formula> experimental data but not the <inline-formula> <tex-math notation="LaTeX">$\langle 100\rangle $ </tex-math></inline-formula> data due to the anisotropy-induced plateaus and negative differential velocity. Therefore, a modified Farahmand model is used. To allow parameter interpolation in anisotropic simulation, the modified Farahmand model is also calibrated for the <inline-formula> <tex-math notation="LaTeX">$\langle 111\rangle $ </tex-math></inline-formula> direction. The model is then used to predict the mobility of electrons and holes in undoped Si at 4 K, which can be served as the initial calibration parameters when reliable experimental data is available for the technology computer-aided design (TCAD) model development.

A Wide Temperature Range Unified Undoped Bulk Silicon Electron and Hole Mobility Model