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Memristor is a promising device as a fundamental building block for future unconventional system architectures such as neuromorphic computing, reconfigurable logic, and multibit memories. Therefore, to facilitate circuit design using memristors, accurate and efficient models spanning a wide range of programming voltages and temperatures are required. In the first part of this series, we propose a behavioral model for temperature dependence of nonvolatile switching dynamics of TiO<italic>x</italic> memristors. We begin by describing pulsed resistance transients (PRTs) of the memristors and then we use a multistage methodology to establish bias and temperature dependence of the model parameters. The proposed model is then shown to accurately describe the PRT characteristics of Pt/TiO<italic>x</italic>/Au and Pt/TiO<italic>x</italic>/Pt memristors.

ieee transactions on electron devices

Compact Modeling of the Switching Dynamics and Temperature Dependencies in TiO<italic>&#x2093;</italic>-Based Memristors&#x2014;Part I: Behavioral Model

Compact Modeling of the Switching Dynamics and Temperature Dependencies in TiOₓ-Based Memristors—Part I: Behavioral Model